參數(shù)資料
型號: 2SK2684
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel DV-L MOS FET(N溝道 DV-L MOSFET)
中文描述: 硅?頻道的DV -蜇場效應(yīng)晶體管(不適用溝道的DV -蜇MOSFET)的
文件頁數(shù): 5/10頁
文件大小: 68K
代理商: 2SK2684
2SK2684(L), 2SK2684(S)
5
1.0
0.8
0.6
0.4
0.2
0
4
8
12
16
20
1
10
100
2
50
500
200
100
20
50
10
5
100
80
60
40
20
–40
0
40
80
120
160
0
0.1
0.3
1
3
10
30
100
100
30
3
10
0.3
1
0.1
I = 20 A
5 A
10 A
20
5
V = 4 V
10 V
I = 20 A
V = 4 V
10 V
5, 10 A
5, 10, 20 A
25
°
C
Tc = –25
°
C
75
°
C
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
Pulse Test
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