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參數(shù)資料
| 型號： | 2SK2685 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | GaAs HEMT |
| 中文描述： | 砷化鎵遷移率晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 49K |
| 代理商： | 2SK2685 |
2SK2685
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSO
V
GDO
I
D
Pch
6
V
Gate to source voltage
–6
V
Gate to drain voltage
–7
V
Drain current
20
mA
Channel power dissipation
100
mW
Channel temperature
Tch
125
°
C
°
C
Storage temperature
Tstg
–55 to +125
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to source leak current
I
GSS
V
GS(off)
I
DSS
—
—
–20
μ
A
V
GS
= –6 V, V
DS
= 0
V
DS
= 3 V, I
D
= 100
μ
A
V
= 3 V, V
GS
= 0
(Pulse Test)
Gate to source cutoff voltage
–0.3
—
–2.0
V
Drain current
35
50
70
mA
Forward transfer admittance
|y
fs
|
40
60
—
mS
V
= 3 V, I
D
= 10 mA,
f = 1 kHz
Associated gain
Ga
—
17.0
—
dB
V
= 3 V, I
D
= 10 mA,
f = 2 GHz
Associated gain
Ga
—
15.2
—
dB
V
= 3 V, I
D
= 3 mA,
f = 2 GHz
Associated gain
Ga
16
21.4
—
dB
V
= 3 V, I
D
= 10 mA,
f = 900 MHz
Associated gain
Ga
—
19.7
—
dB
V
= 3 V, I
D
= 3 mA,
f = 900 MHz
Minimum noise figure
Fmin
—
0.83
—
dB
V
= 3 V, I
D
= 10 mA,
f = 2 GHz
Minimum noise figure
Fmin
—
1.08
—
dB
V
= 3 V, I
D
= 3 mA,
f = 2 GHz
Minimum noise figure
Fmin
—
0.52
1.0
dB
V
= 3 V, I
D
= 10 mA,
f = 900 MHz
Minimum noise figure
Fmin
—
0.74
—
dB
V
= 3 V, I
D
= 3 mA,
f = 900 MHz
Note:
Marking is “ZT–”.
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