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參數(shù)資料
| 型號： | 2SK2706 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | MOSFET |
| 中文描述： | 18 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FM100, TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SK2706 |
Absolute Maximum Ratings
Electrical Characteristics
Symbol
Ratings
Unit
V
DSS
450
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
450
V
nA
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
I
D
= 100
μ
A, V
GS
= 0V
V
GS
=
±
30V
V
DS
= 450V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 20V, I
D
= 9A
V
GS
= 10V, I
D
= 9A
V
V
GSS
±
30
±
100
100
4.0
V
I
D
±
18
A
I
D (pulse)
±
72
(Ta = 25
o
C)
(Ta = 25
o
C)
2.0
10
A
P
D
85 (Tc = 25
o
C)
15
0.24
2500
500
260
40
60
170
85
1.0
3.0
W
E
AS
700
0.30
1.5
I
SD
= 18A, V
GS
= 0V
mJ
Tch
150
V
DS
= 10V, f = 1.0MHz,
V
GS
= 0V
I
D
= 9A, V
DD
= 200V,
R
L
= 22
, V
GS
= 10V,
See Figure 2 on Page 5.
o
C
I
AS
18
A
Tstg
–
55 to +150
o
C
Symbol
Unit
Conditions
Ratings
typ
max
min
34
*
2
*
1
0
10
20
18
4
2
0
10
12
14
16
6
8
5
15
4.5V
5V
V
GS
= 10V
0
0
2
18
10
12
14
16
0.1
0.2
0.3
–
50
0
0
50
100
150
0.2
0.1
0.4
0.3
0.6
0.5
0.7
4
2
5
10
20
0
4
18
16
14
12
10
V
DS
= 20V
25
o
C
125
o
C
0
20
50
80
90
0
50
100
150
0
2
4
6
8
0
2
4
6
10
T
C
=
–
55
o
C
Wt niiehasn
Without heatsink
10V
6
8
4
6
8
I
D
(A)
0.05
0.3
0.1
0.5
1
18
10
0.5
1
10
30
5
5
8
70
60
40
10
30
V
GS
= 4V
25
o
C
125
o
C
V
DS
= 20V
T
C
=
–
55
o
C
I
D
= 18A
I
D
= 9A
I
D
= 9A
V
GS
= 10V
0
10
20
30
40
50
100
500
1000
5000
10000
Ciss
Coss
Crss
V
GS
=
0V
f
= 1MHz
00
0.5
1.0
1.5
4
8
18
16
14
12
10
6
2
5V,10V
V
GS
=
0V
3
5
10
50
100
500
0.1
0.5
1
5
10
100
50
I
D
(pulse) max
R
DS(ON
LMTED
I
D
max
100
μ
s
DCOPERATON
1ms
2SK2706
External dimensions 2 ...... FM100
*
1: P
W
100
μ
s, duty cycle 1%
2: V
DD
= 30V, L = 4mH, I
L
= 18A, unclamped, R
G
= 50
,
See Figure 1 on Page 5.
(Tc=25
o
C)
R
D
)
R
D
)
R
(
(
C
Ta (
o
C)
V
D
V
DS
—
I
D
Characteristics
I
D
—
Re
(yfs)
Characteristics
V
DS
—
Capacitance
Characteristics
V
SD
—
I
DR
Characteristics
Ta
—
P
D
Characteristics
Safe Operating Area
V
GS
—
V
DS
Characteristics
T
C
—
R
DS (ON)
Characteristics
V
GS
—
I
D
Characteristics
I
D
—
R
DS (ON)
Characteristics
V
DS
(V)
V
DS
(V)
V
SD
(V)
I
D
I
D
P
D
Tc (
o
C)
V
GS
(V)
I
D
(A)
V
GS
(V)
V
DS
(V)
I
D
I
D
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