參數(shù)資料
型號(hào)： 2SK2727
元件分類(lèi)： JFETs
英文描述： 0.95 ohm, POWER, FET
封裝： SC-65, TO-3P, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 39K
代理商： 2SK2727
2SK2727
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.5
—
3.5
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state
resistance
R
DS(on)
—
0.75
0.95
I
D = 5A, VGS = 10V*
1
Forward transfer admittance
|y
fs|
4.2
7.0
—
S
I
D = 5A, VDS = 10V*
1
Input capacitance
Ciss
—
1100
—
pF
V
DS = 10V
Output capacitance
Coss
—
330
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
65
—
pF
f = 1MHz
Total gate charge
Qg
—
21
—
nc
V
DD = 400V
Gate to source charge
Qgs
—
5
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
8
—
nc
I
D = 10A
Turn-on delay time
t
d(on)
—
20
—
ns
V
GS = 10V, ID = 5A
Rise time
t
r
—
70
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—55—
ns
Fall time
t
f
—50—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
D = 10A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = 10A, VGS = 0
diF/ dt = 100A/
s
Note:
1. Pulse test
See characteristics curves of 2SK2726
相關(guān)PDF資料
PDF描述
2SK2727 10 A, 500 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796L-E 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796STL-E 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2796STL-E 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2800 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2727(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2729(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2730-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box
2SK2731T146 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2733(F) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220
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