參數(shù)資料
型號(hào): 2SK2761-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-channel MOS-FET
中文描述: 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 357K
代理商: 2SK2761-01MR
N-channel MOS-FET
600V
1
> Characteristics
2SK2761-01MR
FAP-IIS Series
10A
50W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=4,5A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
I
D
R
D
]
I
D
1
2
3
V
DS
[V]
T
ch
[°C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
D
]
g
f
V
G
4
5
6
I
D
[A]
I
D
[A]
T
ch
[°C]
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=10A; Tc=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
C
V
D
V
G
I
F
7
8
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=60V; I
AV
=10A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
E
10
I
D
12
Starting T
ch
[°C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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