參數(shù)資料
型號: 2SK2770-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-channel MOS-FET
中文描述: 3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-3P, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 356K
代理商: 2SK2770-01
N-channel MOS-FET
900V
5,5
> Characteristics
2SK2770-01
FAP-IIS Series
3,5A
100W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=2A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
I
D
R
D
]
I
D
1
2
3
V
DS
[V]
T
ch
[°C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
D
]
g
f
V
G
4
5
6
I
D
[A]
I
D
[A]
T
ch
[°C]
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=90V; I
AV
=3,5A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
C
E
I
F
7
8
9
V
DS
[V]
Starting T
ch
[°C]
V
SD
[V]
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
P
D
10
I
D
12
T
c
[°C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
相關PDF資料
PDF描述
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