參數(shù)資料
型號: 2SK2795
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET UHF Power Amplifier
中文描述: 硅?通道場效應晶體管超高頻功率放大器
文件頁數(shù): 3/6頁
文件大?。?/td> 40K
代理商: 2SK2795
2SK2795
Main Characteristics
0
50
100
150
200
2.0
1.5
1.0
0.5
0.20
0.16
0.12
0.08
0.04
0
0.4
0.8
1.2
1.6
2.0
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
6
4 V
3 V
5 V
4.5 V
6 V
3.5 V
2.5 V
1.5 V
2 V
V = 1 V
Tc = –25°C
25°C
75°C
0.001
1
0.5
0.2
0.02
0.1
0.05
0.003
0.01
0.3
0.1
0.3
1
0.01
Tc = –25°C
25°C
75°C
C
Case Temperature Tc (°C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Pulse Test
V = 5 V
Pulse Test
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Drain Current I (A)
F
f
Forward Transfer Admittance
vs. Drain Current
V = 5 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SK2796 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2796L Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2796S Silicon N-Channel MOS FET(N溝道MOSFET)
2SK2797 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK2735(L)
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