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參數(shù)資料
| 型號： | 2SK2796STL-E |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK2796STL-E |
2SK2796(L), 2SK2796(S)
Rev.5.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
5
A
Drain peak current
ID(pulse)
Note1
20
A
Body-drain diode reverse drain current
IDR
5
A
Avalanche current
IAP
Note3
5
A
Avalanche energy
EAR
Note3
2.14
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
0.12
0.16
ID = 3 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
0.16
0.25
ID = 3 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
2.5
4.0
—
S
ID = 3 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
180
—
pF
Output capacitance
Coss
—
90
—
pF
Reverse transfer capacitance
Crss
—
30
—
pF
VDS = 10V, VGS = 0,
f = 1MHz
Turn-on delay time
td(on)
—
9
—
ns
Rise time
tr
—
25
—
ns
Turn-off delay time
td(off)
—
35
—
ns
Fall time
tf
—
55
—
ns
VGS = 10 V, ID = 3 A,
RL = 10
Body–drain diode forward voltage
VDF
—
1.0
—
V
IF = 5A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
40
—
ns
IF = 5A, VGS = 0
diF/ dt =50 A/
s
Note:
4. Pulse test
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