參數(shù)資料
型號: 2SK2800
元件分類: JFETs
英文描述: 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 67K
代理商: 2SK2800
2SK2800
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state
R
DS(on)
1520m
I
D = 20A, VGS = 10V
Note4
resistance
R
DS(on)
2540m
I
D = 20A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
2035—
S
I
D = 20A, VDS = 10V
Note4
Input capacitance
Ciss
1500
pF
V
DS = 10V
Output capacitance
Coss
720
pF
V
GS = 0
Reverse transfer capacitance
Crss
200
pF
f = 1MHz
Turn-on delay time
t
d(on)
20
ns
I
D = 20A, RL = 1.5
Rise time
t
r
180
ns
V
GS = 10V
Turn-off delay time
t
d(off)
200
ns
Fall time
t
f
200
ns
Body–drain diode forward voltage
V
DF
0.95
V
I
F = 40A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—70
V
I
F = 40A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
相關(guān)PDF資料
PDF描述
2SK2826-ZJ 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK2826 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2890-01MR 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1278 10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
2SK2688-01L 50 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
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