- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371549 > 2SK2809-01MR (FUJI ELECTRIC CO LTD) Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 16V; Case Size: 10x20 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | 2SK2809-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 16V; Case Size: 10x20 mm; Packaging: Bulk |
| 中文描述： | 50 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 402K |
| 代理商： | 2SK2809-01MR |
N-channel MOS-FET
60V
0,01
> Characteristics
2SK2809-01MR
FAP-IIIB Series
50A
50W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=40A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=80A; T
C
=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; T
ch
=25°C
↑
C
↑
V
D
↑
V
G
↑
I
F
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Maximum Avalanche Energy vs. starting T
ch
E
AV
=f(starting T
ch
): V
CC
=24V; I
AV
≤
50A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
E
A
10
↑
I
D
12
starting T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2823 | N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED, ANALOG SWITCH APPLICATIONS) |
| 2SK2824 | N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED SWITCH, ANALOG SWITCH APPLICATIONS) |
| 2SK2825 | N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED SWITCH, ANALOG SWITCH APPLICATIONS) |
| 2SK2827-01 | Power MOSFET |
| 2SK2832-01 | Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2809-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK2824(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:SILICON N CHANNEL MOS TYPE - Tape and Reel |
| 2SK2825(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 0.1A 3-Pin SSM T/R |
| 2SK2826-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2827-01SC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。