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參數(shù)資料
| 型號： | 2SK2826-ZJ |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, 3 PIN |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 210K |
| 代理商： | 2SK2826-ZJ |
Data Sheet D11273EJ3V0DS
7
2SK2826
PACKAGE DRAWINGS (Unit: mm)
1)
TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
3)
TO-263 (MP-25ZJ)
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
4) TO-220SMD(MP-25Z)
Note
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.0±0.3
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
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