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參數(shù)資料
| 型號(hào)： | 2SK2826 |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 2SK2826 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 2001
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D11273EJ3V0DS00 (3rd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The mark
!
! shows major revised points.
DESCRIPTION
The 2SK2826 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-state Resistance
RDS(on)1 = 6.5 m
MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 m
MAX. (VGS = 4.0 V, ID = 35 A)
Low Ciss : Ciss = 7200 pF TYP.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, –10
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±70
A
Drain Current (pulse)
Note1
ID(pulse)
±280
A
Total Power Dissipation (TC = 25°C)
PT1
100
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note2
IAS
70
A
Single Avalanche Energy
Note2
EAS
490
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20
→ 0 V
5
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2826
TO-220AB
2SK2826-S
TO-262
2SK2826-ZJ
TO-263
2SK2826-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in
Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2890-01MR | 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1278 | 10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P |
| 2SK2688-01L | 50 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2809-01MR | 50 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15 |
| 2SK2807-01S | 35 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2826-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2827-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK2835TP | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TPS - Tape and Reel |
| 2SK2837 | 功能描述:MOSFET N-CH 500V 20A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2837(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 20A 3PIN 2-16C1C - Rail/Tube 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk |
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