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參數(shù)資料
| 型號(hào)： | 2SK2835 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 397K |
| 代理商： | 2SK2835 |
2SK2835
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.56
0.8
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
—
S
Input capacitance
Ciss
—
440
—
Reverse transfer capacitance
Crss
—
35
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
120
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
20
—
Fall time
tf
—
15
—
Switching time
Turnoff time
toff
—
60
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
10
—
Gatesource charge
Qgs
—
6
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 100 V, VGS = 10 V, ID = 5 A
—
4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
150
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
0.45
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K2835
Lot No.
Note 4
Part No. (or abbreviation code)
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|---|---|
| 2SK2835TP | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TPS - Tape and Reel |
| 2SK2837 | 功能描述:MOSFET N-CH 500V 20A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2837(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 20A 3PIN 2-16C1C - Rail/Tube 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk |
| 2SK2837(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 20A TO-3PN |
| 2SK2838(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220 |
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