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參數(shù)資料
| 型號(hào)： | 2SK2862 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 418K |
| 代理商： | 2SK2862 |
2SK2862
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2862
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 2.9 (typ.)
High forward transfer admittance
: |Yfs| = 1.7 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
3
A
Pulse (t = 1 ms)
(Note 1)
IDP
5
A
Drain current
Pulse (t = 100 μs)
(Note 1)
IDP
12
A
Drain power dissipation (Tc = 25°C)
PD
25
W
Single pulse avalanche energy
(Note 2)
EAS
112
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
5.0
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, starting Tch = 25°C, L = 48.4 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2862(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SK2864-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A ZP |
| 2SK2865(Q) | 制造商:Toshiba 功能描述:Nch 600V 2A 5@10V PW-Mold Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold |
| 2SK2865(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 2A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SK2865TE16L1NQ | 制造商:Toshiba America Electronic Components 功能描述:POWER MOSFETS |
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