參數(shù)資料
型號: 2SK2902
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: N-CHANNEL SILICON POWER MOS-FET
中文描述: N溝道硅片功率場效應(yīng)管
文件頁數(shù): 2/4頁
文件大?。?/td> 115K
代理商: 2SK2902
2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
I
VDS [V]
Safe operating area
ID=f(VDS):D=0.01,Tc=25°C
t=
1μs
10μs
1ms
10ms
100ms
100μs
D.C.
Characteristics
2SK2902-01MR
FUJI POWER MOSFET
t
T
D=
t
T
0
50
100
150
0
10
20
30
40
50
Power Dissipation
PD=f(Tc)
P
Tc [°C]
0
1
2
3
4
5
0
20
40
60
80
100
5.5V
6V
4.0V
3.5V
4.5V
10V
8V
5V
VGS=20V
Typical output characteristics
ID=f(VDS):80μs pulse test,Tc=25°C
I
VDS [V]
0
2
4
6
8
10
0.1
1
10
100
Typical transfer characteristics
ID=f(VGS):80μs pulse test,VDS=25V,Tch=25°C
I
VGS [V]
10
0
10
1
10
2
10
0
10
1
10
2
Typical forward transconductance
gfs=f(ID):80μs pulse test,VDS=25V,Tch=25°C
g
ID [A]
0
20
40
60
80
100
0
10
20
30
40
50
6V
R
]
ID [A]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80μs pulse test,Tch=25°C
8V
10V
20V
4.5V
5.0V
4.0V
VGS=
3.5V
5.5V
相關(guān)PDF資料
PDF描述
2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET
2SK2903 N-CHANNEL SILICON POWER MOS-FET
2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET
2SK2904-01 N-CHANNEL SILICON POWER MOS-FET
2SK2905-01R N-CHANNEL SILICON POWER MOS-FET
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