參數(shù)資料
型號(hào)： 2SK2908-01L
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel MOS-FET
中文描述： 9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TPACK-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 269K
代理商： 2SK2908-01L
2SK2908-01L,S
N-channel MOS-FET
FAP-IIIB Series
600V
1,2
±9A
60W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
V
mJ*
W
°C
°C
600
±9
±32
±35
9
144.4
60
150
-55 ~ +150
L=3.27mH,Vcc=60V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
I
DSS
I
GSS
R
DS(on)
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=600V
V
GS
=0V
V
GS
=±35V
I
D
=4,5A
I
D
=4,5A
I
D
=4,5A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
600
3,5
4,0
10
0,2
10
1,0
1,0
4,5
500
1,0
100
1,2
1,2
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
2,5
5
900
150
70
25
70
60
35
1400
230
110
V
CC
=300V
V
GS
=10V
I
D
=9A
40
110
90
60
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
R
GS
=10
T
ch
=25°C
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 3,27mH
I
F
=2 X I
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
9
1,0
550
7,0
1,50
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
2,08
75,0
Unit
°C/W
°C/W
R
th(ch-c)
R
th(ch-a)
相關(guān)PDF資料
PDF描述
2SK2908-01S N-channel MOS-FET
2SK2914 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
2SK2915 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
2SK2916 N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
2SK2917 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
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