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參數(shù)資料
| 型號： | 2SK2909 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CP, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 263K |
| 代理商： | 2SK2909 |
2SK2909
No.3512–3/4
tr
SW Time - I D
A S O
P D - Ta
VDD=10V
VGS=4V
IDP=3.2A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
2
3
5
7
23
5 7
23
5 7
23
57
2
3
5
7
2
3
5
7
72
3
2
3
57
Ciss,Coss,Crss - VDS
VGS - Qg
f= 1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
2
3
5
7
VDS=10V
ID=800mA
10ms
1ms
100
s
ID=0.8A
10
1.0
100
1000
0
1
2
3
4
5
6
7
8
9
10
1.0
100
td(on)
td(off)
tf
DC
operation
1.0
0.1
4
2
06
8
10
1214161820
1
2
3
4
6
5
0
20
60
40
80
120
100
140
160
0
0.04
0.08
0.12
0.16
0.20
0.24
0.25
0.28
0.01
0.1
1.0
0.1
1.0
10
0.01
R DS(on) - Ta
VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
I F - VSD
ID=0.4A,V
GS
=4V
ID=0.1A,V
GS
=2.5V
020
-20
-40
-60
40
60
80
100
120
160
140
Ta=
-
25
°C
25
°C
75
°C
100
0
200
500
300
350
400
450
50
150
250
0
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
0.9
1.0
0.001
0.01
0.1
10
1.0
Ciss,
Coss,
Crss
–
p
F
Drain-to-Source Voltage,VDS –V
Total Gate Charge, Qg
–
nC
Gate-to-Source
Voltage,
V
GS
–V
Drain Current, ID –A
Switching
Time,
SW
Time
–
n
s
Drain
Current,
I
D
–A
Ta= 25C
Single pulse
Ambient Temperature, Ta –
°C
Ambient Temperature, Ta –
°C
Allowable
Power
Dissipation,
P
D
–W
Diode Forward Voltage, VSD –V
Forward
Current,
I F
–A
Static
Drain-to-Source
On-State
Resistance,
R
DS(on)
–
m
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| 2SK2922 | RF SMALL SIGNAL, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2912L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2914 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube |
| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
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