參數(shù)資料
型號(hào): 2SK2912S
元件分類: JFETs
英文描述: 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LDPAK-3
文件頁數(shù): 14/14頁
文件大?。?/td> 76K
代理商: 2SK2912S
2SK2912(L), 2SK2912(S)
7
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
V
= 0, –5 V
GS
10 V
5 V
200
160
120
80
40
25
50
75
100
125
150
0
Channel Temperature Tch (
°C)
Repetive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
Avalanche Test Circuit
Avalanche Waveform
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
I
= 40 A
V
= 25 V
duty < 1 %
Rg > 50
AP
DD
相關(guān)PDF資料
PDF描述
2SK2912STL-E 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK291PRF 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK291TRF 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK291QRR 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK291QRR 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2912S(TR-E) 制造商:Renesas Electronics Corporation 功能描述:
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2SK2915 功能描述:MOSFET N-CH 600V 16A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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