參數(shù)資料
型號: 2SK291S
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場效應(yīng)| N溝道|我為28mA(直)|到92
文件頁數(shù): 1/11頁
文件大?。?/td> 58K
代理商: 2SK291S
2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-567D (Z)
5th. Edition
Jul. 1998
Features
Low on-resistance
R
DS(on) = 7m typ.
4V gate drive devices.
High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關(guān)PDF資料
PDF描述
2SK291T TRANSISTOR | JFET | N-CHANNEL | 36MA I(DSS) | TO-92
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2SK2945 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK2954-01MR MOSFET
2SK308 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
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