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參數(shù)資料
| 型號(hào)： | 2SK2929 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 52K |
| 代理商： | 2SK2929 |
2SK2929
5
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Case Temperature Tc (°C)
S
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
D
R
W
D
R
W
D
1.0
0.8
0.6
0.4
0.2
0
4
8
12
16
20
I = 15 A
5 A
10 A
0.1
1
10
0.2
5
0.02
0.05
0.01
2
0.5
50
20
0.2
0.1
V = 4 V
10 V
Pulse Test
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
V = 4 V
10 V
2, 5 A
10 A
2, 5, 10 A
0.1
0.3
1
3
10
30
100
50
20
5
10
1
2
0.5
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2930 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2931 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2932 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2933 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2938 | Silicon N Channel MOS FET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2929-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2930-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2931-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2933-E | 制造商:Renesas Electronics 功能描述:60V 15A TO3 Cut Tape |
| 2SK2934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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