參數資料
型號: 2SK2930
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數: 3/10頁
文件大?。?/td> 53K
代理商: 2SK2930
2SK2930
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
Note4
I
D
= 15A, V
GS
= 4V
Note4
I
D
= 15A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
10
μ
A
μ
A
Zero gate voltege drain current
10
Gate to source cutoff voltage
1.5
2.5
V
Static drain to source on state
0.020
0.026
resistance
0.032
0.050
Forward transfer admittance
14
23
S
Input capacitance
1100
pF
Output capacitance
Coss
540
pF
Reverse transfer capacitance
Crss
200
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
15
ns
I
D
= 15A, V
GS
= 10V
R
L
= 2
Rise time
180
ns
Turn-off delay time
175
ns
Fall time
195
ns
Body–drain diode forward voltage
0.95
V
I
F
= 35A, V
GS
= 0
I
= 35A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
40
ns
相關PDF資料
PDF描述
2SK2931 Silicon N Channel MOS FET High Speed Power Switching
2SK2932 Silicon N Channel MOS FET High Speed Power Switching
2SK2933 Silicon N Channel MOS FET High Speed Power Switching
2SK2938 Silicon N Channel MOS FET(N溝道MOSFET)
2SK2938L Silicon N Channel MOS FET(N溝道MOSFET)
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