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參數(shù)資料
| 型號(hào)： | 2SK2938L-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大小： | 109K |
| 代理商： | 2SK2938L-E |
Data Sheet D13098EJ3V0DS
7
2SK3059
PACKAGE DRAWING (Unit : mm)
1.Gate
2.Drain
3.Source
3.2±0.2
φ
15.0±0.3
3±0.1
12.0±0.2
13.5
MIN.
4±0.2
0.7±0.1
1.3±0.2
1.5±0.2
2.54 TYP.
123
2.5±0.1
0.65±0.1
4.5±0.2
2.7±0.2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
EQUIVALENT CIRCUIT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2939(S) | 0.05 ohm, POWER, FET |
| 2SK2939(L) | 0.05 ohm, POWER, FET |
| 2SK2939S-E | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939S | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939L | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
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