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參數(shù)資料
| 型號： | 2SK2957 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 50K |
| 代理商： | 2SK2957 |
2SK2957(L),2SK2957(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
30
V
Gate to source voltage
±
20
V
Drain current
50
A
Drain peak current
Note1
200
A
Body-drain diode reverse drain current
50
A
Channel dissipation
75
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
30
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 25A, V
GS
= 10V
Note3
±
20
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
—
—
10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state
resistance
—
7.0
10
m
Static drain to source on state
resistance
R
DS(on)
—
12
18
m
I
D
= 25A, V
GS
= 4V
Note3
Forward transfer admittance
|y
fs
|
Ciss
25
45
—
S
I
D
= 25A, V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
Input capacitance
—
2000
—
pF
Output capacitance
Coss
—
1500
—
pF
Reverse transfer capacitance
Crss
—
350
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
V
GS
= 10V, I
D
= 25A
R
L
= 0.4
Rise time
—
330
—
ns
Turn-off delay time
—
190
—
ns
Fall time
—
190
—
ns
Body–drain diode forward voltage
—
0.95
—
V
I
F
= 50A, V
GS
= 0
I
= 50A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
—
60
—
ns
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2958 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2958L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2958S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2958(S) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| 2SK2959 | Silicon N Channel MOS FET High Speed Power Switching |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2959-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220AB Box |
| 2SK296 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2961 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-92 |
| 2SK2961(F) | 制造商:Toshiba 功能描述:Nch 60V 2A 0.27@10V TO92MOD Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod |
| 2SK2961(F,M) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 2A TO-92 |
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