參數(shù)資料
型號(hào): 2SK2957L
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 5/9頁
文件大?。?/td> 50K
代理商: 2SK2957L
2SK2957(L),2SK2957(S)
5
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
300
10000
1000
3000
50
40
30
20
10
0
20
16
12
8
4
20
40
60
80
100
0
1000
500
100
200
20
50
10
0.1 0.2
2
10
50
100
50
10
20
2
5
1
di / dt = 50 A / μs
V = 0, Ta = 25 °C
100
300
20
1
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 50 A
V
GS
V
DS
V = 5 V
10 V
25 V
V = 25 V
10 V
5 V
0.5
5
V = 10 V, V = 10 V
PW = 5 μs, duty < 1 %
r
d(on)
t
d(off)
t
tf
相關(guān)PDF資料
PDF描述
2SK2957S Silicon N Channel MOS FET High Speed Power Switching
2SK2957 Silicon N Channel MOS FET High Speed Power Switching
2SK2958 Silicon N Channel MOS FET High Speed Power Switching
2SK2958L Silicon N Channel MOS FET High Speed Power Switching
2SK2958S Silicon N Channel MOS FET High Speed Power Switching
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