參數(shù)資料
型號: 2SK2957S
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 4/9頁
文件大小: 50K
代理商: 2SK2957S
2SK2957(L),2SK2957(S)
4
0.5
0.4
0.3
0.2
0.1
0
4
8
12
16
20
1
10
100
2
50
100
20
50
10
5
20
16
12
8
4
–40
0
40
80
120
160
0
0.1 0.2
1
2
10
10
5
1
2
0.5
20
5
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
W
D
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
Case Temperature Tc (°C)
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
V = 4 V
10 V
5 ,10, 20 A
20
20
50
50
Pulse Test
R
W
D
Pulse Test
I = 20 A
10 A
5 A
500
200
V = 4 V
10 V
I = 5, 10, 20 A
0.5
5
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SK2957 Silicon N Channel MOS FET High Speed Power Switching
2SK2958 Silicon N Channel MOS FET High Speed Power Switching
2SK2958L Silicon N Channel MOS FET High Speed Power Switching
2SK2958S Silicon N Channel MOS FET High Speed Power Switching
2SK2958(S) TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB
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