參數(shù)資料
型號(hào): 2SK2974
廠商: Mitsubishi Electric Corporation
英文描述: RF POWER MOS FET(VHF/UHF power amplifiers)
中文描述: 射頻功率MOS FET(甚高頻/超高頻功率放大器)
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 29K
代理商: 2SK2974
2SK2974
MITSUBISHI RF POWER MOS FET
Nov. ′97
OUTLINE DRAWING
Dimensions in mm
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
2
3
3.50
1
t=1.2MAX
(BOTTOM)
(TOP)
4.9
INDEX MARK
2.0
DESCRIPTION
2SK2974 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
High power gain:Gpe
8.4dB
@V
DD
=7.2V,f=450MHz,Pin=30dBm
High efficiency:55% typ.
Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
Typ
Max
10
1
1.7
Min
Limits
Parameter
Test conditions
Symbol
V
DSS
V
GSS
P
ch
T
j
T
stg
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14
×
2.8
×
2mm)
Parameter
Ratings
17
±10
10
175
Unit
V
V
W
C
C
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
-40 to +110
ABSOLUTE MAXIMUM RATINGS
(T
C
=25C
, unless otherwise noted
)
ELECTRICAL CHARACTERISTICS
(T
C
=25C
, unless otherwise noted
)
Symbol
Unit
I
DSS
I
GSS
V
TH
C
iss
C
oss
P
out
h
D
Threshold voltage
Note: Above parameters,ratings,limits and conditions are subject to change.
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=7V, I
DS
=1mA
V
GS
=10V, V
DS
=0V,f=1MHz
V
DS
=10V, V
GS
=0V,f=1MHz
55
μA
μA
V
pF
pF
W
%
1.0
V
DS
=7.2V, P
in
=1W,f=450MHz
7
50
8
95
90
Conditions
Tc=25C (Note2)
TYPE No.
LOT No.
INDEX
MARK
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