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參數(shù)資料
| 型號(hào)： | 2SK2975 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | RF POWER MOS FET(VHF/UHF power amplifiers) |
| 中文描述： | 射頻功率MOS FET（甚高頻/超高頻功率放大器） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2SK2975 |
2SK2975
MITSUBISHI RF POWER MOS FET
Nov. ′97
1.5mm
46mm
C2
GR40-10
10pF
R1
CR10-562
5600
R2
CR10-562
5600
C7
GR40-102
1000pF
C4
GR40-10
10pF
C12
GR40-130
13pF
C13
GR40-102
1000pF
L1
4Turns AWG#26,
φ
1.1
Enameled wire(mm)
C14
GR40-10
10pF
C1
GR40-102
1000pF
V
GG
INPUT
V
DD
OUTPUT
C5
GR40-102
1000pF
C6
10 μF 50V
C8
GR40-10
10pF
C9
GR40-102
1000pF
C10
10 μF 50V
C11
GR40-270
27pF
C3
GR40-310
31pF
12.5mm
12mm
22.5mm
16mm
3mm
3mm
P
O
, add VS. V
DD
DRAIN SUPPLY VOLTAGE V
DD
(V)
4
32
30
5
8
14
12
103
16
10
28
26
24
20
6
7
9
34
38
42
46
50
70
30
40
0
60
50
20
10
80
90
100
I
DS
VS. V
GS
V
GS
(V)
0
1.0
2.0
3.0
5.0
0.5
1.0
1.5
3.0
4.0
2.0
0
0.5
1.5
2.5
3.5
4.5
2.5
TYPICAL PERFORMANCE DATA
EQUIVALENT CIRCUIT
Note: Board material-glass epoxi substrate
micri strip line width=2.8mm,
ε
r
:4.8,t=1.6mm
I
DS
VS. V
DS
V
DS
(V)
0
2
4
6
10
4
8
0
1
3
5
7
9
T
C
=25C
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V
GS
=2.0V
5
3.5
4.0
3
2
1
4.5
V
DS
=9.6V
T
C
=25C
P
O
, add VS. Pin
INPUT POWER Pin (dBm)
0
8
34
32
30
12
24
14
12
10
8
16
0
32
28
26
24
20
4
2
4
16
20
26
40
60
70
0
90
100
80
50
10
P
O
6
36
40
30
20
η
add
2
6
10
14
18
22
28 30
11
12 13
η
add
P
O
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