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參數(shù)資料
| 型號(hào)： | 2SK2984-S |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | TO-262, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 234K |
| 代理商： | 2SK2984-S |
2
Data Sheet D12356EJ3V0DS
2SK2984
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 20 A
6.5
10
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 4.5 V, ID = 20 A
8.5
13
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 20 A
18
36
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
2850
pF
Output Capacitance
Coss
1150
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
500
pF
Turn-on Delay Time
td(on)
70
ns
Rise Time
tr
1100
ns
Turn-off Delay Time
td(off)
210
ns
Fall Time
tf
ID = 20 A
VGS(on) = 10 V
VDD = 15 V
RG = 10
310
ns
Total Gate Charge
QG
65
nC
Gate to Source Charge
QGS
9.5
nC
Gate to Drain Charge
QGD
ID = 40 A
VDD = 24 V
VGS = 10 V
12.5
nC
Body Diode Forward Voltage
VF(S-D)
IF = 40 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
50
ns
Reverse Recovery Charge
Qrr
IF = 40 A, VGS = 0 V
di/dt = 100 A /
S
100
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr
td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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| 2SK2984-S | 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
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