參數(shù)資料
型號： 2SK3021TP
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251VAR
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 20A條（?。﹟對251VAR
文件頁數(shù)： 4/10頁
文件大?。?/td> 54K
代理商： 2SK3021TP
Datasheet Title
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
40
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 40 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1 mA, VDS = 10 V
Note1
Static drain to source on state
R
DS(on)
—
4.5
5.8
m
I
D = 40 A, VGS = 10 V
Note1
resistance
—
6.5
10
m
I
D = 40 A, VGS = 4 V
Note1
Forward transfer admittance
|y
fs|
5080—
S
I
D = 40 A, VDS = 10 V
Note1
Input capacitance
Ciss
—
6800
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1300
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
380
—
pF
f = 1 MHz
Total gate charge
Qg
—
130
—
nc
V
DD = 25 V
Gate to source charge
Qgs
—
25
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
30
—
nc
I
D = 75 A
Turn-on delay time
t
d(on)
—
60
—
ns
V
GS = 10 V, ID = 40 A
Rise time
t
r
—
300
—
ns
R
L = 0.75
Turn-off delay time
t
d(off)
—
550
—
ns
Fall time
t
f
—
400
—
ns
Body–drain diode forward voltage
V
DF
—
1.05
—
V
I
F = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
90
—
ns
I
F = 75 A, VGS = 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3021TP-FA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252VAR
2SK3022 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel Power F-MOSFET
2SK3022(TENTATIVE) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3022 (Tentative) - N-Channel Power F-MOS FET
2SK302200L 功能描述:MOSFET N-CH 60V 5A UG-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3023 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
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