- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351960 > 2SK3022(TENTATIVE) 2SK3022 (Tentative) - N-Channel Power F-MOS FET PDF資料下載
參數(shù)資料
| 型號： | 2SK3022(TENTATIVE) |
| 英文描述： | 2SK3022 (Tentative) - N-Channel Power F-MOS FET |
| 中文描述： | 2SK3022（暫定） - N溝道功率的F -場效應(yīng)晶體管 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK3022(TENTATIVE) |
Datasheet Title
9
Package Dimensions
Unit: mm
10.2 ± 0.3
(1.4)
8.6
±
0.3
1.27 ± 0.2
1.2 ± 0.2
2.54 ± 0.5
11.3
±
0.5
(1.5)
0.86
+0.2
–0.1
3.0
+0.3
–0.5
0.76 ± 0.1
10.0
+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
11.0
±
0.5
10.2 ± 0.3
(1.4)
8.6
±
0.3
1.27 ± 0.2
2.54 ± 0.5
(1.5)
0.86
+0.2
–0.1
10.0
+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
1.2 ± 0.2
(1.5)
0.1
+0.2
–0.1
L type
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3023(TENTATIVE) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3026(TENTATIVE) | 2SK3026 (Tentative) - Silicon N-Channel Power F-MOS FET |
| 2SK3027(TENTATIVE) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK302GR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-236AB |
| 2SK302O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3023 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3023(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3023 (Tentative) - N-Channel Power F-MOS FET |
| 2SK3024 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel Power F-MOSFET |
| 2SK3024(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3025 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。