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參數(shù)資料
| 型號(hào)： | 2SK3026(TENTATIVE) |
| 英文描述： | 2SK3026 (Tentative) - Silicon N-Channel Power F-MOS FET |
| 中文描述： | 2SK3026（暫定） -硅N溝道功率的F -場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK3026(TENTATIVE) |
Datasheet Title
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
PW
=
10
ms
(1
shot)
3.5 V
3 V
50
V
= 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
V
= 10 V
Pulse Test
DS
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3027(TENTATIVE) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK302GR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-236AB |
| 2SK302O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK302Y | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-236AB |
| 2SK3031(TENTATIVE) | 2SK3031 (Tentative) - N-Channel Power F-MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3027 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3027(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3027 (Tentative) - Silicon N-Channel Power F-MOS FET |
| 2SK3028 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3028(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3029 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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