參數(shù)資料
型號(hào): 2SK304E
英文描述: TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 2.5MA I(DSS) | SPAK
中文描述: 晶體管|場(chǎng)效應(yīng)| N溝道| 30V的五(巴西)直| 2.5mA的我(直)| SPAK
文件頁數(shù): 4/10頁
文件大?。?/td> 54K
代理商: 2SK304E
Datasheet Title
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
40
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 40 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
I
D = 1 mA, VDS = 10 V
Note1
Static drain to source on state
R
DS(on)
4.5
5.8
m
I
D = 40 A, VGS = 10 V
Note1
resistance
6.5
10
m
I
D = 40 A, VGS = 4 V
Note1
Forward transfer admittance
|y
fs|
5080—
S
I
D = 40 A, VDS = 10 V
Note1
Input capacitance
Ciss
6800
pF
V
DS = 10 V
Output capacitance
Coss
1300
pF
V
GS = 0
Reverse transfer capacitance
Crss
380
pF
f = 1 MHz
Total gate charge
Qg
130
nc
V
DD = 25 V
Gate to source charge
Qgs
25
nc
V
GS = 10 V
Gate to drain charge
Qgd
30
nc
I
D = 75 A
Turn-on delay time
t
d(on)
60
ns
V
GS = 10 V, ID = 40 A
Rise time
t
r
300
ns
R
L = 0.75
Turn-off delay time
t
d(off)
550
ns
Fall time
t
f
400
ns
Body–drain diode forward voltage
V
DF
1.05
V
I
F = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
90
ns
I
F = 75 A, VGS = 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
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