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參數(shù)資料
| 型號(hào)： | 2SK3058-Z |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 55A條（丁）|對263ABVAR |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK3058-Z |
Datasheet Title
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A / s
V
= 0, Ta = 25°C
GS
300
20
1
100
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 75 A
D
VGS
VDS
DD
V
= 40 V
25 V
10 V
0.5
5
500
50
V
= 10 V, V
= 30 V
PW = 5 s, duty < 1%
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
V
= 40 V
25 V
10 V
DD
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3060 | 2SK3060 Data Sheet | Data Sheet[04/2001] |
| 2SK3060-S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3060-Z | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263VAR |
| 2SK3060-ZJ | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3062-Z | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3058-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3059 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3060 Data Sheet | Data Sheet[04/2001] |
| 2SK3060-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-262AA |
| 2SK3060-Z | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(2+Tab) TO-220 SMD |
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