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參數(shù)資料
| 型號(hào)： | 2SK3065T100 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 96K |
| 代理商： | 2SK3065T100 |
2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure
Silicon N-channel
!External dimensions
(Units : mm)
ROHM : MPT3
EIAJ : SC-62
(1) Gate
(2) Drain
(3) Source
0.1
+
0.2
0.05
+0.1
+0.2
0.1
(3)
(2)
(1)
1.0
±
0.3
0.5
±
0.1
2.5
3.0
±0.2
1.5
±0.1
1.5
±0.1
0.4
±0.1
0.5
±0.1
0.4
±0.1
0.4
1.5
±0.1
4.5
1.6
±0.1
Abbreviated symbol : KE
+
0.5 0.3
4.0
MOS FET transistor
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Tc=25
°C)
Channel temperature
Storage temperature
VDSS
VGSS
IDR
PD
Tch
60
V
A
W
°C
±20
2
ID
IDRP1
A
IDP1
Continuous
Pulsed
Continuous
Pulsed
A
8
2
8
150
Tstg
°C
55+150
Symbol
Limits
Unit
1 Pw ≤ 10s, Duty cycle ≤ 1%
2 When mounted on a 40 × 40 × 0.7 mm alumina board.
Reverse drain
current
22
0.5
!Internal equivalent circuit
Drain
Source
Gate
Protection
Diode
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical characteristics
(Ta = 25
°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test Conditions
VGS
= 0V
f
= 1MHz
VDS
= 10V
VGS
= 4V
ID
= 1A, VDD
30V
RL
= 30
RG
= 10
A
pF
S
Unit
V
A
V
pF
ns
ID
= 1A, VGS = 4V
60
0.8
1.5
Min.
160
0.25
Typ.
85
25
20
50
120
70
0.35
±10
10
1.5
0.32
Max.
0.45
ID
= 1A, VGS = 2.5V
ID
= 1A, VDS = 10V
ID
= 1mA, VGS = 0V
VGS
= ±20V, VDS = 0V
VDS
= 60V, VGS = 0V
VDS
= 10V, ID = 1mA
IGSS
IDSS
Yfs
Ciss
Symbol
Coss
Crss
tr
tf
V(BR)DSS
VGS(th)
RDS(on)
td(on)
td(off)
Pw ≤ 300s, Duty cycle ≤ 1%
Static drain-source on-state
resistance
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