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參數(shù)資料
| 型號： | 2SK308 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 120伏特五（巴西）直| 10A條（?。﹟至3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 54K |
| 代理商： | 2SK308 |
Datasheet Title
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A / s
V
= 0, Ta = 25°C
GS
300
20
1
100
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 75 A
D
VGS
VDS
DD
V
= 40 V
25 V
10 V
0.5
5
500
50
V
= 10 V, V
= 30 V
PW = 5 s, duty < 1%
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
V
= 40 V
25 V
10 V
DD
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
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| 2SK3092TP-FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3080 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3081 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3081-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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