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參數(shù)資料
| 型號(hào)： | 2SK30ATMY |
| 英文描述： | TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-92 |
| 中文描述： | 晶體管|場(chǎng)效應(yīng)| N溝道| 1.2MA我（直）|到92 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 54K |
| 代理商： | 2SK30ATMY |
Datasheet Title
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
40
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 40 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1 mA, VDS = 10 V
Note1
Static drain to source on state
R
DS(on)
—
4.5
5.8
m
I
D = 40 A, VGS = 10 V
Note1
resistance
—
6.5
10
m
I
D = 40 A, VGS = 4 V
Note1
Forward transfer admittance
|y
fs|
5080—
S
I
D = 40 A, VDS = 10 V
Note1
Input capacitance
Ciss
—
6800
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1300
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
380
—
pF
f = 1 MHz
Total gate charge
Qg
—
130
—
nc
V
DD = 25 V
Gate to source charge
Qgs
—
25
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
30
—
nc
I
D = 75 A
Turn-on delay time
t
d(on)
—
60
—
ns
V
GS = 10 V, ID = 40 A
Rise time
t
r
—
300
—
ns
R
L = 0.75
Turn-off delay time
t
d(off)
—
550
—
ns
Fall time
t
f
—
400
—
ns
Body–drain diode forward voltage
V
DF
—
1.05
—
V
I
F = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
90
—
ns
I
F = 75 A, VGS = 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
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