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參數(shù)資料
| 型號(hào)： | 2SK3142 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SK3142 |
2SK3142
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source leak current
I
GSS
—
±0.1
AV
GS = ±20V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 30V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Note 1
Static drain to source on state R
DS(on)
—
4.0
5.0
m
I
D = 30A, VGS = 10V
Note 1
resistance
—
5.5
8.5
m
I
D = 30A, VGS = 4V
Note 1
Forward transfer admittance
|y
fs|45
75
—
S
I
D = 30A, VDS = 10V
Note 1
Input capacitance
Ciss
—
6800
—
pF
V
DS = 10V
Output capacitance
Coss
—
1550
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
500
—
pF
f = 1MHz
Total gate charge
Qg
—
130
—
nc
V
DD = 10V
Gate to source charge
Qgs
—
16
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
30
—
nc
I
D = 60A
Turn-on delay time
t
d(on)
—
50
—
ns
V
GS = 10V, ID = 30A
Rise time
t
r
—
340
—
ns
R
L = 0.33
Turn-off delay time
t
d(off)
—
560
—
ns
Fall time
t
f
—
350
—
ns
Body–drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 60A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = 60A, VGS = 0
diF/ dt =50A/s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3142-01(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3142-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3147 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3147(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251 |
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