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參數(shù)資料
| 型號(hào)： | 2SK315E |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場(chǎng)效應(yīng)| N溝道| 2.5mA的我（直）| SPAK |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK315E |
2SK3134(L),2SK3134(S)
4
Main Characteristics
160
120
80
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
Operation in
this area is
limited by R DS(on)
PW
=
10
ms
(1
shot)
3 V
40
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
V
= 10 V
Pulse Test
DS
Pulse Test
V
= 10 V
GS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK315F | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK317 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK318 | TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR |
| 2SK3199 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK315F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK |
| 2SK316 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3160 | 制造商:Hitachi 功能描述:Silicon N Channel High Speed Power Switching Mosfet - 200V 10A 30W |
| 2SK3160-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,10A,0.13ohm,TO-220FM |
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