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參數(shù)資料
| 型號： | 2SK3161-E |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 94K |
| 代理商： | 2SK3161-E |
2SK3161
Rev.3.00 Sep 07, 2005 page 5 of 8
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
VGS = 0, –5 V
10 V
5 V
20
16
12
8
4
25
50
75
100
125
150
0
Pulse Test
IAP = 15 A
VDD = 50 V
duty < 0.1 %
Rg > 50
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 1.67
°C/W, Tc = 25°C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3161STL-E | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3162 | 20 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3211(S) | 25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3211(L) | 25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3211(S) | 25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3161L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3161S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161STR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) LDPAK(S) T/R Cut Tape |
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