參數(shù)資料
型號： 2SK3161(S)
文件頁數(shù)： 8/12頁
文件大?。?/td> 61K
代理商： 2SK3161(S)
2SK3134(L),2SK3134(S)
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
V
= 10 V
GS
4 V
Pulse Test
R
(m
)
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
0.3
1
0.1
10
1000
10
3
10, 20, 50 A
I
= 50 A
D
30
300
V
= 4 V
GS
10 V
Pulse Test
10, 20 A
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V
= 10 V
Pulse Test
DS
相關PDF資料
PDF描述
2SK3151 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3154 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3154 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3210(L)
2SK3210(S)
相關代理商/技術參數(shù)
參數(shù)描述
2SK3161STL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3161STR-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) LDPAK(S) T/R Cut Tape
2SK3162 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3162(E) 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220FM Box
2SK3162-E 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220FM Box Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,20A,60m ohm,TO-220FM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*