參數資料
型號: 2SK3177
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數: 5/9頁
文件大?。?/td> 51K
代理商: 2SK3177
2SK3177
5
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
2000
10000
1000
100
50
200
500
200
160
120
80
40
0
20
16
12
8
4
40
80
120
160
200
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1
0.3
1
3
10
30100
di / dt = 50 A / μs
V = 0, Ta = 25°C
10
20
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 15 A
V
GS
V
DS
V = 150 V
100 V
50 V
tf
r
d(on)
t
d(off)
t
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
V = 10 V, V = 30 V
PW = 5 μs, duty < 1%
V = 150 V
100 V
50 V
5000
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相關代理商/技術參數
參數描述
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2SK3179 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK318 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR
2SK319 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)