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參數(shù)資料
| 型號： | 2SK3207 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SK3207 |
2SK3207
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
150
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 150 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 9A, V
GS
= 10V*
4
I
D
= 9A, V
GS
= 4V*
4
I
D
= 9A, V
DS
= 10V*
4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
70
90
m
m
resistance
—
85
120
Forward transfer admittance
11
18
—
S
Input capacitance
—
1100
—
pF
Output capacitance
Coss
—
350
—
pF
Reverse transfer capacitance
Crss
—
170
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
15
—
ns
I
D
= 9A, V
GS
= 10V
R
L
= 3.33
Rise time
—
110
—
ns
Turn-off delay time
—
270
—
ns
Fall time
—
130
—
ns
Body–drain diode forward voltage
—
0.9
—
V
I
F
= 18A, V
GS
= 0
I
= 18A, V
= 0
diF/ dt = 50A/
μ
s
Body–drain diode reverse recovery
time
Note:
4. Pulse test
—
150
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3209 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK321 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SI N-CHANNEL JUNCTION |
| 2SK3210 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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