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參數(shù)資料
| 型號(hào)： | 2SK3211 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 153K |
| 代理商： | 2SK3211 |
2SK3211
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage
200
±
20
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V*
4
I
D
= 15 A, V
GS
= 4 V*
4
I
D
= 15 A, V
DS
= 10 V
*
4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
10
V
μ
A
μ
A
V
m
m
S
Gate to source leak current
—
Zero gate voltege drain current
—
—
Gate to source cutoff voltage
1.0
—
2.5
—
60
75
Static drain to source on state
resistance
—
65
85
Forward transfer admittance
18
30
—
Input capacitance
—
2420
—
pF
Output capacitance
Coss
—
790
—
pF
Reverse transfer capacitance
Crss
—
340
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
Rise time
—
230
—
ns
Turn-off delay time
—
590
—
ns
Fall time
—
330
—
ns
I
D
= 15 A, V
GS
= 10 V
R
L
= 2
Body–drain diode forward voltage
—
0.95
—
V
I
F
= 25 A, V
GS
= 0
I
= 25 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
—
230
—
ns
Note:
4. Pulse test
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| 2SK3212 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3214 | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3211(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR |
| 2SK3211(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AA |
| 2SK3211L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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