參數(shù)資料
型號: 2SK322-S
元件分類: 小信號晶體管
英文描述: 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
文件頁數(shù): 2/6頁
文件大小: 28K
代理商: 2SK322-S
2SK322
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
–15
V
Gate to source voltage
V
GSO
–15
V
Drain current
I
D
50
mA
Gate current
I
G
5mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
–15
V
I
G = –100 A
Gate to source breakdown
voltage
V
(BR)GSO
–15
V
I
G = –100 A
Gate cutoff current
I
GSS
–10
nA
V
GS = –7 V, VDS = 0
Drain current
I
DSS*
1
5
50
mA
V
DS = 5 V, VGS = 0 (pulse)
Gate to source cutoff voltage
V
GS(off)
–3.0
V
DS = 5 V, ID = 100 A
Forward transfer admittance
|y
fs|
25
45
mS
V
DS = 5 V, VGS = 0, f = 1 kHz
Note:
1. The 2SK322 is grouped by I
DSS as follows.
Grade
P
Q
R
S
T
Mark
WP
WQ
WR
WS
WT
I
DSS
5 to 16
14 to 24
20 to 32
28 to 42
36 to 50
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