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參數(shù)資料
| 型號： | 2SK3230J3 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | TUSM, SC-89, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK3230J3 |
Data Sheet D15942EJ1V0DS
3
2SK3230
TYPICAL CHARACTERISTICS (TA = 25°C)
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
TA - Ambient Temperature - C
dT
-
Derating
Factor
-
%
VGS - Gate to Source Voltage - V
IG
-
Gate
Current
-
A
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
20
10
40
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
mA
0.6
0.4
0.2
0
+0.2
0.2
0.6
0.4
0.8
1.0
VDS = 5 V
ID
S
=
3
0
A
ID
S
=
2
0
A
ID
S
=
1
0
A
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
VDS - Drain to Source Voltage - V
C
iSS
-
Input
Capacitance
-
pF
10
20
50
100
1
2
5
15
2
VDS = 0 V
f = 1.0 MHz
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
Zero-Gate Voltage Drain Current - A
V
GS
(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS = 5 V
1.0
0.5
0.2
0.1
0.05
0.02
10.0
20
50
100
200
500
1000
0.01
5.0
2.0
10
VGS (off)
|yfs|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3233 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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