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參數(shù)資料
| 型號： | 2SK3230J5 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | TUSM, SC-89, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 174K |
| 代理商： | 2SK3230J5 |
2SK2412
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
40
60
80
100
120
140
160
20
40
60
80
100
20
40
60
80
100
120
140
160
10
20
30
40
50
100
10
1
10
100
Pulsed
0
2
20
40
60
80
46
8
10
12
0
10
48
100
1000
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
Tc - Case Temperature - C
P
T-
Total
Power
Dissipation
-
W
dT
-
Percentage
of
Rated
Power
-
%
ID
-
Drain
Current
-
A
ID
-
Drain
Current
-
A
ID
-
Drain
Current
-
A
0
20
0
1
2
3
567
0.1
1
R
DS
(on)
Limited
(at
V
GS
=
10
V)
DC
ID (pulse)
ID (DC)
Tc = 25 C
Single Pulse
100
s
Power
Dissipation
Limited
10
ms
1 ms
200
ms
VGS = 10 V
VGS = 4 V
VGS = 6 V
Pulsed
TA = –25 C
25 C
125 C
PW
=
10
s
VDS = 10 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3233 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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