參數(shù)資料
型號: 2SK3233
元件分類: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220CFM, 3 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 65K
代理商: 2SK3233
2SK3233
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±30
V, V
DS = 0
Zero gate voltage drain current
I
DSS
——
1
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
4.0
V
DS = 10 V, ID = 1 mA
Static drain to source on state
resistance
R
DS(on)
1.1
1.5
I
D = 2.5 A, VGS = 10 V
Note4
Forward transfer admittance
|y
fs|
3.0
4.5
S
I
D = 2.5 A, VDS = 10 V
Note4
Input capacitance
Ciss
580
pF
V
DS = 25 V
Output capacitance
Coss
70
pF
V
GS = 0
Reverse transfer capacitance
Crss
13
pF
f = 1 MHz
Turn-on delay time
td(on)
20
ns
I
D = 2.5 A
Rise time
tr
15
ns
V
GS = 10 V
Turn-off delay time
td(off)
65
ns
R
L = 100
Fall time
tf
15
ns
Rg = 10
Total gate charge
Qg
15
nC
V
DD = 400 V
Gate to source charge
Qgs
3
nC
V
GS = 10 V
Gate to drain charge
Qgd
8
nC
I
D = 5 A
Body-drain diode forward
voltage
V
DF
0.85
1.3
V
I
F = 5 A, VGS = 0
Body-drain diode reverse
recovery time
trr
400
ns
I
F = 5 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
1.5
C
diF/dt = 100 A/
s
Note:
4. Pulse test
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