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參數(shù)資料
| 型號： | 2SK3287 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Switching |
| 中文描述： | 硅?通道場效應晶體管高速開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SK3287 |
2SK3287
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note 2
30
V
Gate to source voltage
±
20
V
Drain current
300
mA
Drain peak current
Note1
1.2
A
Body-drain diode reverse drain current
300
mA
Channel dissipation
400
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
5
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
1
Gate to source cutoff voltage
V
GS(off)
1.3
—
2.3
V
I
D
= 10
μ
, V
DS
= 5 V
Static drain to source on state R
DS(on)
resistance
—
1.26
1.44
I
D
= 150 mA,V
GS
= 10 V
Note 3
R
DS(on)
|y
fs
|
Ciss
—
2.8
3.44
I
D
= 50 mA,V
GS
= 4 V
Note 3
Forward transfer admittance
145
220
—
mS
I
D
= 150 mA, V
DS
= 10 V
Note 3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
6
—
pF
Output capacitance
Coss
—
18
—
pF
Reverse transfer capacitance Crss
—
2
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
200
—
ns
I
D
= 150 mA, V
GS
= 10 V
R
L
= 66.6
Rise time
—
600
—
ns
Turn-off delay time
—
1100
—
ns
Fall time
Note:
—
1100
—
ns
3. Pulse test
4. Marking is AN
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| 2SK3288 | Silicon N Channel MOS FET High Speed Switching |
| 2SK3289 | Silicon N Channel MOS FET High Speed Switching |
| 2SK3290 | Silicon N Channel MOS FET High Speed Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3287AN(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3288 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3288ENTL | 功能描述:MOSFET N-CH 30V .1A MPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3289 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3289AN(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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