參數(shù)資料
型號: 2SK3299-S
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大小: 79K
代理商: 2SK3299-S
1999,2000
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
Date Published
Printed in Japan
D14060EJ1V0DS00 (1st edition)
April 2000 NS CP(K)
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
shows major revised points.
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 34 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 10 A)
Gate voltage rating
±
30 V
Low on-state resistance
R
DS(on)
= 0.75
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
V
DSS
V
GSS
600
±
30
V
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±
10
A
Drain Current (Pulse)
Note1
I
D(pulse)
±
40
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
75
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Single Avalanche Current
Note2
I
AS
10
A
Single Avalanche Energy
Note2
E
AS
66.7
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
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