參數(shù)資料
型號: 2SK3306
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大?。?/td> 69K
代理商: 2SK3306
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confirm that this is the latest version.
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availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14004EJ2V0DS00 (2nd edition)
January 2000 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge :
Q
G
= 13 nC TYP. (V
DD
= 400
V, V
GS
= 10
V, I
D
= 5.0
A)
Gate voltage rating :
±
30
V
Low on-state resistance :
R
DS(on)
= 1.5
MAX. (V
GS
= 10 V, I
D
= 2.5 A)
Avalanche capability ratings
Isolated TO-220(MP-45F) package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
500
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
±
30
±
5
±
20
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25°C)
P
T
35
W
Total Power Dissipation (T
A
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
5.0
A
E
AS
125
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
Starting T
ch
= 25
°C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3306
Isolated TO-220 (MP-45F)
(Isolated TO-220)
#
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